1N1622 silicon power rectifier ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.a mericanmicrosemi.com document page 1 of 2 dim. inches milimeter minimum maximum minimum maximum notes a --- --- --- --- 1 b .424 .437 10.77 11.10 c --- .505 --- 12.82 d .600 .800 15.24 20.32 e .422 .453 10.72 11.50 f .075 .175 1.91 4.44 g --- .405 --- 10.29 h .163 .189 4.15 4.80 2 j --- .310 --- 7.87 m --- .350 --- 8.89 dia n .020 .065 .510 1.65 p .070 .100 1.78 2.54 dia a b c d e f g h thd s43 1.50 min .531 .665 .334 .051 .563 .50 aif 10 - 32 s43a .240 max 0.23 216 500 .984 min .157 m3 ? glass passivated die ? low forward voltage ? 250a surge rating ? glass to metal seal construction ? rrm to 1 600 v electrical characteristics average forward current i f(av) 22 amps t c = 1 34 o c, square wave, r ? jc = 2.5 o c/w maximum surge current i fsm 250 amps 8.3ms, half sine, t j = 200 o c max i 2 t for fusing i 2 t 260 a 2 s max peak forward voltage v fm 1. 2 volts i fm = 30a; t j = 25 o c * max peak reverse current i rm 10 ? a v rrm , t j = 25 o c max peak reverse current i rm 1.0 m a v rrm , t j = 150 o c max recommended operating frequency 10khz pulse test: pulse width 300 ? sec. duty cycle 2% thermal and mechanical characteristics storage temperature range t stg - 65 o c to 20 0 o c operating junction temp range t j - 65 o c to 20 0 o c maximum thermal resistance r ? jc 2.5 o c/w junction to c ase mounting torque 25 C 3 0 inch pounds weight .16 ounces ( 5 grams) typical
1N1622 silicon power rectifier ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 2 of 2 junction to case thermal impedance C o c/watts maximum power dissipation - watts maximum allowable case temperature - o c figure 1 maximum forward characteristics f igure 2 typical reverse characteristics f igure 3 forward current derating f igure 4 maximum forward power dissipation instantaneous forward current - amperes typical reverse current - ma jnstantaneous forward voltage - volts reverse voltage - volts average forward current - amperes average forward current - amperes f igure 5 transient thermal impedance time in seconds
|
